for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 1 hmc376lp3 / 376LP3E gaas phemt mmic low noise amplifier, 700 - 1000 mhz v01.0610 general description features functional diagram the hmc376lp3 & hmc376LP3E are gaas phemt mmic low noise ampli ers that are ideal for gsm & cdma cellular basestation front-end receivers operating between 700 and 1000 mhz. the ampli er has been optimized to provide 0.7 db noise gure, 15 db gain and +36 dbm output ip3 from a single supply of +5v. the hmc376lp3(e) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the lna for each application. for applications which require improved noise gure, please see the hmc617lp3(e). noise figure: 0.7 db output ip3: +36 dbm gain: 15 db externally adjustable supply current single positive supply: +5v 50 ohm matched input/output electrical speci cations, t a = +25 c, vdd = +5v, rbias = 10 ohms* typical applications the hmc376lp3 / hmc376LP3E is ideal for: ? cellular/3g infrastructure ? base stations & repeaters ? cdma, w-cdma, & td-scdma ? private land mobile radio ? gsm/gprs & edge ? uhf reallocation applications parameter min. typ. max. min. typ. max. units frequency range 810 - 960 700 - 1000 mhz gain 12.5 14.5 11.5 14.5 db gain variation over temperature 0.005 0.01 0.005 0.01 db / c noise figure 0.7 1.0 0.7 1.0 db input return loss 13 14 db output return loss 12 12 db reverse isolation 20 22 db output power for 1db compression (p1db) 21.5 21 dbm saturated output power (psat) 22 22 dbm output third order intercept (ip3) (-20 dbm input power per tone, 1 mhz tone spacing) 36 36 dbm supply current (idd) 73 73 ma *rbias resistor value sets current, see application circuit herein.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 2 broadband gain & return loss gain vs. temperature noise figure vs. temperature reverse isolation vs. temperature input return loss vs. temperature -25 -15 -5 5 15 25 0.25 0.5 0.75 1 1.25 1.5 1.75 2 s21 s11 s22 response (db) frequency (ghz) hmc376lp3 / 376LP3E gaas phemt mmic low noise amplifier, 700 - 1000 mhz v01.0610 0 0.4 0.8 1.2 1.6 0.6 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c noise figure (db) frequency (ghz) -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c isolation (db) frequency (ghz) 10 12 14 16 18 20 0.6 0.7 0.8 0.9 1 1.1 +25c +85c - 40c gain (db) frequency (ghz) output return loss vs. temperature -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c return loss (db) frequency (ghz)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 3 gaas phemt mmic low noise amplifier, 700 - 1000 mhz hmc376lp3 / 376LP3E v01.0610 p1db vs. temperature @ idd = 73 ma psat vs. temperature @ idd = 73 ma output ip3 vs. temperature @ idd = 73 ma 15 17 19 21 23 25 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 30 32 34 36 38 40 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 15 17 19 21 23 25 0.7 0.75 0.8 0.85 0.9 0.95 1 +25 c +85 c -40 c psat (dbm) frequency (ghz) gain, noise figure & power vs. supply current @ 900 mhz 12 14 16 18 20 22 24 0.4 0.6 0.8 1 60 70 80 90 100 110 120 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply current (ma) typical supply current vs. vdd with rbias = 10 ohms vdd (vdc) idd (ma) +4.5 73.0 +5.0 73.4 +5.5 73.6 drain bias voltage (vdd) +8.0 vdc rf input power (rfin)(vs = +5.0 vdc) +15 dbm channel temperature 150 c continuous pdiss (t = 85 c) (derate 11.83 mw/c above 85 c) 0.769 w thermal resistance (channel to ground paddle) 84.5 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c absolute maximum ratings idd (ma) rbias (ohms) 60 12 70 10 80 9.1 100 6.8 120 5.1 recommended bias resistor values for various idd electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 4 gaas phemt mmic low noise amplifier, 700 - 1000 mhz hmc376lp3 / 376LP3E v01.0610 outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. part number package body material lead finish msl rating package marking [3] hmc376lp3 low stress injection molded plastic sn/pb solder msl1 [1] h376 xxxx hmc376LP3E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h376 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 5 pin number function description interface schematic 1, 4, 5, 7, 9, 12 - 14, 16 n/c no connection necessary. these pins may be connected to rf/dc ground. performance will not be affected. 2rfin this pin is matched to 50 ohms with a 47 nh inductor to ground. see application circuit. 3, 6, 10 gnd these pins and package bottom must be connected to rf/dc ground. 8res this pin is used to set the dc current of the ampli er by selection of external bias resistor. see application circuit. 11 rfout this pin is ac coupled and matched to 50 ohms from 0.7 - 1.0 ghz. 15 vdd power supply voltage. choke inductor and bypass capacitors are required. see application circuit. pin descriptions application circuit note 1: l1, l2 and c1 should be located as close to the pins as possible. gaas phemt mmic low noise amplifier, 700 - 1000 mhz hmc376lp3 / 376LP3E v01.0610
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 6 gaas phemt mmic low noise amplifier, 700 - 1000 mhz hmc376lp3 / 376LP3E v01.0610 item description j1 - j2 pcb mount sma rf connector j3 - j4 dc pin c1 1000 pf capacitor, 0402 pkg. c2 1000 pf capacitor, 0603 pkg. c3 15000 pf capacitor, 0603 pkg. l1 18 nh inductor, 0603 pkg. l2 47 nh inductor, 0603 pkg. r1 resistor, 0402 pkg. u1 hmc376lp3 / hmc376LP3E ampli er pcb [2] 112580 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 112585 [1]
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